IXSM17N100A
IXYS Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 17A I(C), 1000V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-609 Codee0
- Surface MountNO
- Terminal FinishTin/Lead (Sn/Pb)
- Fall Time-Max (tf)1000 ns
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)17 A
- Power Dissipation-Max (Abs)150 W
- Gate-emitter Thr Voltage-Max7 V
- Collector-emitter Voltage-Max1000 V
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IXSM17N100A
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IXSM17N100A