IXSD35N100A-7M by IXYS Corporation | Sourcengine

IXYS Corporation IXSD35N100A-7M

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N7
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH SPEED
Number of Elements
1
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector-emitter Voltage-Max (V)
1000
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED