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IXGX50N60BD1

IXYS Corporation

IXGX50N60BD1 Datasheet
IXYS Corporation IXGX50N60BD1
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PSIP-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JESD-609 Code
    e1
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Case Connection
    COLLECTOR
  • Terminal Finish
    TIN SILVER COPPER
  • Terminal Position
    SINGLE
  • Additional Feature
    HIGH SPEED
  • Number of Elements
    1
  • Rise Time-Max (tr)
    150 ns
  • Number of Terminals
    3
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Application
    POWER CONTROL
  • Turn-on Time-Nom (ton)
    110 ns
  • Gate-emitter Voltage-Max
    20 V
  • Turn-off Time-Nom (toff)
    375 ns
  • Operating Temperature-Max
    150 Cel
  • Collector Current-Max (IC)
    75 A
  • Power Dissipation-Max (Abs)
    300 W
  • Transistor Element Material
    SILICON
  • Gate-emitter Thr Voltage-Max
    5.5 V
  • Collector-emitter Voltage-Max
    600 V

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IXGX50N60BD1