IXGR32N90B2D1 by Littelfuse | Sourcengine

Littelfuse IXGR32N90B2D1

Lifecycle status
Active
RoHS
RoHS compliant
Description
Insulated Gate Bipolar Transistor, 47A I(C), 900V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e1
VCEsat-Max (V)
2.9
Case Connection
ISOLATED
Terminal Finish
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
160
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
42
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
410
Collector Current-Max (IC) (A)
47
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
900
Screening Level / Reference Standard
UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s)
10