IXGP8N100
IXYS Corporation
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionIGBT Transistors discrete igbt high speed series
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW SATURATION VOLTAGE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)54
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)15
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)900
- Collector Current-Max (IC) (A)16
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)5.5
- Collector-emitter Voltage-Max (V)1000
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IXGP8N100