IXGM25N100
IXYS Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-204AE
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.5 V
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-204AE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Case ConnectionCOLLECTOR
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)350 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)1670 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)50 A
- Power Dissipation-Max (Abs)200 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max1000 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max200 W
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for IXGM25N100
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
IXGM25N100