IXGM10N80A
IXYS Corporation
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 800V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- J-STD-609 Codee0
- Terminal FinishTin/Lead (Sn/Pb)
- Fall Time-Max (ns)1000
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)200
- Power Dissipation-Max (W)100
- Gate-emitter Voltage-Max (V)30
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)5
- Collector-emitter Voltage-Max (V)800
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IXGM10N80A