IXBT2N250-TR by Littelfuse | Sourcengine

Littelfuse IXBT2N250-TR

Lifecycle status
Active
Description
Trans IGBT Chip N-CH 2500V 5A 32W 3-Pin(2+Tab) TO-268 T/R
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-268AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
3.8
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn)
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
32
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
310
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
252
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
2500
Time@Peak Reflow Temperature-Max (s)
10