IXBH5N160G
IXYS Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionIGBT Transistors igbt bimosfet-high volt
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AD
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee3
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)68
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)340
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Nom (toff) (ns)190
- Collector Current-Max (IC) (A)5.7
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)5.5
- Collector-emitter Voltage-Max (V)1600
- Time@Peak Reflow Temperature-Max (s)10
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IXBH5N160G