IRLR014 by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRLR014

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252AA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
7.7 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
25 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
240
Power Dissipation Ambient-Max
25 W
Drain-source On Resistance-Max
0.2 ohm
Time@Peak Reflow Temperature-Max (s)
30