IRL510SPBF
Vishay Intertechnology, Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)43
- Drain Current-Max (ID) (A)5.6
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Operating Temperature-Max (Cel)175
- Drain-source On Resistance-Max (ohm)0.54
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IRL510SPBF
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IRL510SPBF