IRHM2C50SED
International Rectifier Corporation
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY, RADIATION HARDENED
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)10.4 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)500 mJ
- Drain-source On Resistance-Max0.65 ohm
- Pulsed Drain Current-Max (IDM)41.6 A
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IRHM2C50SED