IRHLNA797064B by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRHLNA797064B

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 56A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Additional Feature
TTL COMPATIBLE
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
56
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
1060
Pulsed Drain Current-Max (IDM) (A)
224
Drain-source On Resistance-Max (ohm)
0.015
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED