IRHLG77110
International Rectifier Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionSmall Signal Field-Effect Transistor, 1.8A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-CDIP-T14
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeMO-036AB
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements4
- Number of Terminals14
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.4
- Drain Current-Max (ID) (A)1.8
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.22
- Screening Level / Reference StandardMIL-19500; RH - 100K Rad(Si)
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IRHLG77110