IRHG8214 by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRHG8214

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDIP-T14
Configuration
SEPARATE, 4 ELEMENTS
JEDEC-95 Code
MO-036AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Additional Feature
RADIATION HARDENED
Number of Elements
4
Number of Terminals
14
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
250 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.4 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
75 mJ
Drain-source On Resistance-Max
2.4 ohm
Pulsed Drain Current-Max (IDM)
2 A