IRGSL8B60KPBF by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRGSL8B60KPBF

Lifecycle status
Transferred
RoHS
RoHS compliant
Description
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-262AA
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN OVER NICKEL
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
56
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
26
Power Dissipation-Max (W)
140
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
43
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
220
Collector Current-Max (IC) (A)
28
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
30