IRGP50B60PD1 by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRGP50B60PD1

Lifecycle status
Transferred
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AC
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY, LOW CONDUCTION LOSS
Fall Time-Max (ns)
20
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
20
Power Dissipation-Max (W)
390
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
39
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
225
Turn-off Time-Nom (toff) (ns)
161
Collector Current-Max (IC) (A)
75
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
30