IRG4PSC71UD
International Rectifier Corporation
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)167 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)179 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)503 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)85 A
- Power Dissipation-Max (Abs)350 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max600 V
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IRG4PSC71UD