IRG4BC10SD-LPBF
International Rectifier Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-262
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)1080 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)106 ns
- Turn-off Time-Nom (toff)1780 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)14 A
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)38 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max600 V
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
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IRG4BC10SD-LPBF