IRFY044MEB
International Rectifier Corporation
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 20A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-257AB
- JESD-609 Codee0
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Number of Elements1
- Reference StandardCECC
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)20 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)153 ns
- DS Breakdown Voltage-Min60 V
- Turn-off Time-Max (toff)160 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max60 W
- Drain-source On Resistance-Max0.035 ohm
- Pulsed Drain Current-Max (IDM)128 A
0 suppliers available to buy or to bid for IRFY044MEB
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
IRFY044MEB
Send an RFQ
IRFY044MEB