IRFU4105PBF
International Rectifier Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-251AA
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, ULTRA-LOW RESISTANCE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)20 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min55 V
- Operating Temperature-Max175 Cel
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)46 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)65 mJ
- Peak Reflow Temperature (Cel)260
- Power Dissipation Ambient-Max48 W
- Drain-source On Resistance-Max0.045 ohm
- Pulsed Drain Current-Max (IDM)100 A
- Time@Peak Reflow Temperature-Max (s)30
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IRFU4105PBF