IRFU1N60APBF by VISHAY SILICONIX | Sourcengine

VISHAY SILICONIX IRFU1N60APBF

Lifecycle status
Active
RoHS
RoHS compliant
Description
MOSFETs to251 600v 1.4a n-ch mosfet
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
1.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
93
Pulsed Drain Current-Max (IDM) (A)
5.6
Drain-source On Resistance-Max (ohm)
7
Time@Peak Reflow Temperature-Max (s)
40