IRFR012 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. IRFR012

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 6.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
6.7 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
67 ns
DS Breakdown Voltage-Min
50 V
Turn-off Time-Max (toff)
53 ns
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
25 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
1.4 mJ
Power Dissipation Ambient-Max
25 W
Drain-source On Resistance-Max
0.3 ohm
Pulsed Drain Current-Max (IDM)
27 A