IRFN9530 by TT ELECTRONICS PLC | Sourcengine

TT ELECTRONICS PLC IRFN9530

Lifecycle status
Active
REACH
REACH compliant
Description
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-276AB
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
12
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Pulsed Drain Current-Max (IDM) (A)
48
Drain-source On Resistance-Max (ohm)
0.3
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED