IRFM350-QR-BR1 by TT ELECTRONICS PLC | Sourcengine

TT ELECTRONICS PLC IRFM350-QR-BR1

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH VOLTAGE
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
14
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
400
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
56
Drain-source On Resistance-Max (ohm)
0.415