IRFL1006PBF by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRFL1006PBF

Lifecycle status
Discontinued
Description
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-261AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2.1
Drain Current-Max (ID) (A)
1.6
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Drain-source On Resistance-Max (ohm)
0.22
Time@Peak Reflow Temperature-Max (s)
30