IRFH350PBF
International Rectifier Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-210AC
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MUPM-D2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-210AC
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)15
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)400
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM) (A)56
- Drain-source On Resistance-Max (ohm)0.3
- Time@Peak Reflow Temperature-Max (s)40
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IRFH350PBF
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IRFH350PBF