IRFH350 by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRFH350

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-210AC
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MUPM-D2
Configuration
SINGLE
JEDEC-95 Code
TO-210AC
JESD-609 Code
e0
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
15 A
DS Breakdown Voltage-Min
400 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
150 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.3 ohm
Pulsed Drain Current-Max (IDM)
56 A