IRFF312 by HARRIS SEMICONDUCTOR | Sourcengine

HARRIS SEMICONDUCTOR IRFF312

Lifecycle status
Transferred
Description
Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
15
Drain Current-Max (ID) (A)
1.15
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
30
DS Breakdown Voltage-Min (V)
400
Turn-off Time-Max (toff) (ns)
25
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
15
Pulsed Drain Current-Max (IDM) (A)
4.5
Drain-source On Resistance-Max (ohm)
5