IRFF121
Intersil Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 6A I(D), 80V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-205AF
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)20
- Drain Current-Max (ID) (A)6
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)80
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)36
- Pulsed Drain Current-Max (IDM) (A)24
- Drain-source On Resistance-Max (ohm)0.3
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IRFF121
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IRFF121