IRFE9130-JQR-B by TT ELECTRONICS PLC | Sourcengine

TT ELECTRONICS PLC IRFE9130-JQR-B

Lifecycle status
Active
REACH
REACH compliant
Description
Power Field-Effect Transistor, 6.1A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CQCC-N15
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
QUAD
Additional Feature
AVALANCHE ENERGY RATING
Number of Elements
1
Number of Terminals
15
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
6.1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
92
Pulsed Drain Current-Max (IDM) (A)
24
Drain-source On Resistance-Max (ohm)
0.345
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED