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IRFD113

HARRIS SEMICONDUCTOR

IRFD113 Datasheet
HARRIS SEMICONDUCTOR IRFD113
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDIP-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e0
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    1
  • Drain Current-Max (ID) (A)
    0.8
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    80
  • Operating Temperature-Max (Cel)
    150
  • Drain-source On Resistance-Max (ohm)
    0.8

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IRFD113
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IRFD113