IRFBG30-001
Vishay Intertechnology, Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 2.3A I(D), 1000V, 5.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)2.3 A
- DS Breakdown Voltage-Min1000 V
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max5.6 ohm
- Pulsed Drain Current-Max (IDM)9.2 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IRFBG30-001