IRF9Z14LPBF by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. IRF9Z14LPBF

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
43
Drain Current-Max (ID) (A)
6.7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
31
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
3.7
Avalanche Energy Rating (Eas) (mJ)
140
Pulsed Drain Current-Max (IDM) (A)
27
Drain-source On Resistance-Max (ohm)
0.5
Time@Peak Reflow Temperature-Max (s)
30