IRF9612-012
International Rectifier Corporation
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 1.5A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)1.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Pulsed Drain Current-Max (IDM) (A)6
- Drain-source On Resistance-Max (ohm)4.5
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IRF9612-012