IRF9520NSTRRPBF by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRF9520NSTRRPBF

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
6.8 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
175 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
48 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
140 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.48 ohm
Pulsed Drain Current-Max (IDM)
27 A
Time@Peak Reflow Temperature-Max (s)
30