IRF9130R1
TT ELECTRONICS PLC
- Lifecycle statusNRFND
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-3
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee1
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)11
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)81
- Pulsed Drain Current-Max (IDM) (A)50
- Drain-source On Resistance-Max (ohm)0.35
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IRF9130R1