IRF7811TR
International Rectifier Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 14A I(D), 28V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)14 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min28 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.011 ohm
- Pulsed Drain Current-Max (IDM)100 A
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IRF7811TR
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IRF7811TR