IRF7807D1-TR by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRF7807D1-TR

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MS-012AA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
8.3 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
30 V
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.025 ohm
Pulsed Drain Current-Max (IDM)
66 A