IRF7663TRPBF by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRF7663TRPBF

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 8.2A I(D), 20V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
8.2 A
DS Breakdown Voltage-Min
20 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
1.8 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
115 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.02 ohm
Pulsed Drain Current-Max (IDM)
66 A
Time@Peak Reflow Temperature-Max (s)
30