IRF740PBF VISHAY SILICONIX
- Lifecycle status Transferred
- RoHS RoHS compliant
- Description Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category Semiconductors Transistors Power Field Effect Transistors
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VISHAY SILICONIX IRF740PBF
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3 traceable suppliers for IRF740PBF available
3 traceable suppliers available
- Includes:
- Scheduled shipping up to a year
- 3 year warranty
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Technical Details
back to topJESD-30 Code | R-PSFM-T3 |
Configuration | SINGLE WITH BUILT-IN DIODE |
JEDEC-95 Code | TO-220AB |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Surface Mount | NO |
Terminal Form | THROUGH-HOLE |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT MODE |
Terminal Position | SINGLE |
Additional Feature | AVALANCHE RATED |
Number of Elements | 1 |
Number of Terminals | 3 |
Qualification Status | Not Qualified |
Package Body Material | PLASTIC/EPOXY |
Polarity/Channel Type | N-CHANNEL |
Drain Current-Max (ID) | 10 A |
Transistor Application | SWITCHING |
DS Breakdown Voltage-Min | 400 V |
Operating Temperature-Max | 150 Cel |
Transistor Element Material | SILICON |
Avalanche Energy Rating (Eas) | 520 mJ |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Drain-source On Resistance-Max | 0.55 ohm |
Pulsed Drain Current-Max (IDM) | 40 A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Compliance Details
back to topECCN | EAR99 |
ECCN Governance | EAR |