Compliance Details

ECCN EAR99
ECCN Governance EAR
Single part RFQ by VISHAY SILICONIX.
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Packaging type
Packaging condition
Date Code
Additional Information

4 traceable suppliers for IRF740PBF available

4 traceable suppliers available

  • Includes:
  • Scheduled shipping up to a year
  • 3 year warranty
Supply Attributes
Supplier Availability Price Quantity Total
Supply Attributes
  • Date Code 2051  
  • Packaging Tube
  • Pack Condition Full factory pack
Supplier Availability
  • Stock
    1,500
  • Delivery Date APR 21, 2021  
Price
  • 100+ $ 0.95760
Quantity
Min Qty
Increments of 50
Total
$ 0.00
Supply Attributes
  • Date Code 2046  
  • Packaging Tube
  • Pack Condition Full factory pack
Supplier Availability
  • Stock
    36,048
  • Delivery Date APR 21, 2021  
Price
  • 100+ $ 1.00320
Quantity
Min Qty
Increments of 50
Total
$ 0.00
Supply Attributes
  • Date Code 2051  
  • Packaging Tube
  • Pack Condition Full factory pack
Supplier Availability
  • Stock
    2,060
  • Delivery Date APR 21, 2021  
Price
  • 100+ $ 1.04139
Quantity
Min Qty
Increments of 50
Total
$ 0.00
Supply Attributes
  • Date Code Within 2 years  
  • Packaging Bulk
  • Pack Condition Unknown
Supplier Availability
  • Stock
    19,341
  • Delivery Date APR 21, 2021  
Price
  • 41+ $ 1.42456
  • 50+ $ 1.41431
  • 100+ $ 1.40406
  • 250+ $ 1.39381
  • 500+ $ 1.38356
Quantity
Min Qty
Increments of 1
Total
$ 0.00

Technical Details

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JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position SINGLE
Additional Feature AVALANCHE RATED
Number of Elements 1
Number of Terminals 3
Qualification Status Not Qualified
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) 10 A
Transistor Application SWITCHING
DS Breakdown Voltage-Min 400 V
Operating Temperature-Max 150 Cel
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) 520 mJ
Peak Reflow Temperature (Cel) NOT SPECIFIED
Drain-source On Resistance-Max 0.55 ohm
Pulsed Drain Current-Max (IDM) 40 A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
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