IRF740PBF VISHAY SILICONIX
- Lifecycle status Transferred
- RoHS RoHS compliant
- Description Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- Category Semiconductors Transistors Power Field Effect Transistors
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Technical Details
back to top| JESD-30 Code | R-PSFM-T3 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 Code | TO-220AB |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT Meter |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT MODE |
| Terminal Position | SINGLE |
| Additional Feature | AVALANCHE RATED |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Qualification Status | Not Qualified |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (ID) | 10 A |
| Transistor Application | SWITCHING |
| DS Breakdown Voltage-Min | 400 V |
| Operating Temperature-Max | 150 Cel |
| Transistor Element Material | SILICON |
| Avalanche Energy Rating (Eas) | 520 mJ |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Drain-source On Resistance-Max | 0.55 ohm |
| Pulsed Drain Current-Max (IDM) | 40 A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |