- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.6
- Drain Current-Max (ID) (A)8.7
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)35
- Drain-source On Resistance-Max (ohm)0.022
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IRF7401