IRF7220GPBF
International Rectifier Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 11A I(D), 14V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureULTRA LOW RESISTANCE
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)2.5
- Drain Current-Max (ID) (A)11
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)14
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)110
- Pulsed Drain Current-Max (IDM) (A)88
- Drain-source On Resistance-Max (ohm)0.012
- Time@Peak Reflow Temperature-Max (s)40
0 suppliers available to buy or to bid for IRF7220GPBF
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
IRF7220GPBF