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IRF712

HARRIS SEMICONDUCTOR

IRF712 Datasheet
HARRIS SEMICONDUCTOR IRF712
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.29.00.95
  • SB Code
    8541.29.00.80
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-220AB
  • JESD-609 Code
    e0
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    3
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    1.7 A
  • Transistor Application
    SWITCHING
  • Turn-on Time-Max (ton)
    27 ns
  • DS Breakdown Voltage-Min
    400 V
  • Turn-off Time-Max (toff)
    49 ns
  • Operating Temperature-Max
    150 Cel
  • Power Dissipation-Max (Abs)
    36 W
  • Transistor Element Material
    SILICON
  • Power Dissipation Ambient-Max
    36 W
  • Drain-source On Resistance-Max
    5 ohm
  • Pulsed Drain Current-Max (IDM)
    4.3 A

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IRF712