IRF710STRR
VISHAY SILICONIX
- Lifecycle statusEOL
- DescriptionMOSFET N-CH 400V 2A D2PAK
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)2 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min400 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)120 mJ
- Drain-source On Resistance-Max3.6 ohm
- Pulsed Drain Current-Max (IDM)6 A
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IRF710STRR
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IRF710STRR