IRF5NJ3315PBF by International Rectifier Corporation | Sourcengine

International Rectifier Corporation IRF5NJ3315PBF

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 20A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
20
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
150
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
165
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.08
Time@Peak Reflow Temperature-Max (s)
40