IRF5210STRLHR
International Rectifier Corporation
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY, AVALANCHE RATED, ULTRA LOW RESISTANCE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)40 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min100 V
- Operating Temperature-Max175 Cel
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)780 mJ
- Drain-source On Resistance-Max0.06 ohm
- Pulsed Drain Current-Max (IDM)140 A
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IRF5210STRLHR