- Lifecycle statusActive
- DescriptionSmall Signal Field-Effect Transistor, 5.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)5.6
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
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IRF510G
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IRF510G