IRF253
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-204AE
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)25 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)135 ns
- Feedback Cap-Max (Crss)500 pF
- DS Breakdown Voltage-Min150 V
- Turn-off Time-Max (toff)225 ns
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max150 W
- Drain-source On Resistance-Max0.12 ohm
- Pulsed Drain Current-Max (IDM)100 A
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IRF253