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IRE832E101

OSI LASER DIODE INC

OSI LASER DIODE INC IRE832E101
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    830
  • Response Time-Max (s)
    6.0E-9
  • Semiconductor Material
    GaAlAs
  • Forward Current-Max (A)
    0.15
  • Forward Voltage-Max (V)
    2.4
  • Spectral Bandwidth (nm)
    75
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    100
  • Operating Temperature-Min (Cel)
    -55

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IRE832E101
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IRE832E101